Analysis of thermal conductance of carbon nanotubesJAIN, Neeraj; HARSH.EPJ. Applied physics (Print). 2010, Vol 51, Num 1, issn 1286-0042, 10602.p1-10602.p5Article

Boundary conditions for the electron kinetic equation using expansion techniquesBECKER, M. M; GRUBERT, G. K; LOFFHAGEN, D et al.EPJ. Applied physics (Print). 2010, Vol 51, Num 1, issn 1286-0042, 11001.p1-11001.p7Article

Contrast distortion correction for photoacoustic image based on compensation for pressure distribution of sound fieldYUAN, Y; YANG, S; XIANG, L et al.EPJ. Applied physics (Print). 2010, Vol 49, Num 3, issn 1286-0042, 30901.p1-30901.p6Article

Eddy-current formulation for constructing transmission-line models for machine windingsDE GERSEM, H; HENZE, O; WEILAND, T et al.EPJ. Applied physics (Print). 2010, Vol 49, Num 3, issn 1286-0042, 31101.p1-31101.p7Article

Fourier transform infrared and Raman spectroscopic properties of Cd_1-xSb_xS films deposited by ultrasonic spray pyrolysisÖZER, T; AKSAY, S; KÖSE, S et al.EPJ. Applied physics (Print). 2010, Vol 51, Num 1, issn 1286-0042, 11501.p1-11501.p4Article

Intersubband optical absorption coefficients and refractive index changes in triple quantum well with different well shapesOZTURK, E; SOKMEN, I.EPJ. Applied physics (Print). 2010, Vol 51, Num 1, issn 1286-0042, 10303.p1-10303.p7Article

Structural and optical properties of copper nitride thin films in a reactive Ar/N₂ magnetron sputtering systemDORRANIAN, D; DEJAM, L; SARI, A. H et al.EPJ. Applied physics (Print). 2010, Vol 50, Num 2, issn 1286-0042, 20503.p1-20503.p7Article

Structure and diffusion in simulated liquid GaAsHANH, T. T. T; HOANG, V. V.EPJ. Applied physics (Print). 2010, Vol 49, Num 3, issn 1286-0042, 30301.p1-30301.p7Article

Symmetry-induced perfect transmission and inverse magnetoresistance in cascade junctions of ferromagnet and semiconductorZHANG, R. L; ZHANG, J. S; LI, D et al.EPJ. Applied physics (Print). 2010, Vol 50, Num 1, issn 1286-0042, 10601.1-10601.6Article

The resistance of plasma channel in transformer oilKUDELCIK, J.EPJ. Applied physics (Print). 2010, Vol 50, Num 1, issn 1286-0042, 11002.1-11002.5Article

Vectorial structural characteristics of four-petal Gaussian beams in the far fieldLI, J; CHEN, Y; XIN, Y et al.EPJ. Applied physics (Print). 2010, Vol 50, Num 3, issn 1286-0042, 30702.p1-30702.p7Article

X-ray metrology for advanced microelectronicsWYON, C.EPJ. Applied physics (Print). 2010, Vol 49, Num 2, issn 1286-0042, 20101.p1-20101.p24Article

Dry plasma processing for industrial crystalline silicon solar cell productionHOFMANN, M; RENTSCH, J; PREU, R et al.EPJ. Applied physics (Print). 2010, Vol 52, Num 1, issn 1286-0042, 11101.p1-11101.p10Article

Effect of Ag-content on structure, corrosion behaviour and mechanical properties of Sn-9Zn lead-free solder alloyEL SAID GOUDA; ABDEL AZIZ, H; EL GENDY, Y et al.EPJ. Applied physics (Print). 2010, Vol 52, Num 3, issn 1286-0042, 31302.p1-31302.p5Article

Effect of strontium substitution on electrical conduction properties of Ba₅DyTi₃V₇O₃₀SAHOO, P. S; PANIGRAHI, A; PATRI, S. K et al.EPJ. Applied physics (Print). 2010, Vol 52, Num 3, issn 1286-0042, 30601.p1-30601.p8Article

Evaluation of workers exposure to magnetic fieldsCANOVA, A; FRESCHI, F; REPETTO, M et al.EPJ. Applied physics (Print). 2010, Vol 52, Num 2, issn 1286-0042, 23311.p1-23311.p6Article

Experimental and quantitative investigation of a free round jetZAOUALI, Y; AMMAR, S; KECHICHE, N et al.EPJ. Applied physics (Print). 2010, Vol 52, Num 1, issn 1286-0042, 11302.p1-11302.p11Article

Optical and electrical properties of pure and Ni-modified ZnS nanocrystalsFIRDOUS, Arfat.EPJ. Applied physics (Print). 2010, Vol 52, Num 2, issn 1286-0042, 20602.p1-20602.p5Article

Quasi-solitons of the two-mode Korteweg-de Vries equationLEE, C.-C; LEE, C.-T; LIU, J.-L et al.EPJ. Applied physics (Print). 2010, Vol 52, Num 1, issn 1286-0042, 11301.p1-11301.p8Article

Radially polarized partially coherent beams propagation in uniaxial crystals orthogonal to the optical axisGUO, L; TANG, Z; LIANG, C et al.EPJ. Applied physics (Print). 2010, Vol 52, Num 3, issn 1286-0042, 31301.p1-31301.p6Article

Study and experimentation of a rotor current excited Vernier reluctance machine aimed to direct-driven applicationsTOUNZI, A. M; RAMDANE, B; ZAÏM, M. E et al.EPJ. Applied physics (Print). 2010, Vol 52, Num 1, issn 1286-0042, 11102.p1-11102.p11Article

Study of crystallization rate constant of (Se₈₀Te₂₀)_100-xAg_x chalcogenide glassesSINGH, D; KUMAR, S; THANGARAJ, R et al.EPJ. Applied physics (Print). 2010, Vol 52, Num 2, issn 1286-0042, 20303.p1-20303.p7Article

Toward SiC-JFETs modelling with temperature dependenceBEN SALAH, T; MOREL, H; MTIMET, S et al.EPJ. Applied physics (Print). 2010, Vol 52, Num 2, issn 1286-0042, 20301.p1-20301.p8Article

Organic optoelectronic devices-flexibility versus performanceCHAKAROUN, M; EL AMRANI, A; LUCAS, B et al.EPJ. Applied physics (Print). 2010, Vol 51, Num 3, issn 1286-0042, 33206.p1-33206.p5Conference Paper

An analytical model for the AE effect in magnetic materialsDANIEL, L; HUBERT, O.EPJ. Applied physics (Print). 2009, Vol 45, Num 3, issn 1286-0042, 31101.p1-31101.p11Article